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| 1 | Polarization-sensitive and wide-spectrum photovoltaic detector based on quasi-1D ZrGeTe_(4)nanoribbon显示文摘Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)region.However,the narrow bandgap can cause noise owing to the high dark current in photodetectors.This article reports quasi-1D ZrGeTe_(4)nanoribbonbased photodetectors with low dark current and broadband polarization detection.The photodetector was fabricated by evaporating 50-nm-thick Au electrodes on a ZrGeTe_(4)nanoribbon.Benefiting from the photovoltaic characteristics in the ZrGeTe_(4)nanoribbon and Au electrodes,these photodetectors can operate without bias voltage,with decreased dark current,and improved device performance.Furthermore,the quasi-1D ZrGeTe_(4)nanoribbon-based photodetectors demonstrate a polarization sensitivity in a broadband from visible(VIS)to the NIR region,such as a high photoresponsivity of 625.65 mA W1,large external quantum efficiency of 145.9%at 532 nm,and photocurrent anisotropy ratio of 2.04 at 1064 nm.They exhibit a novel perpendicular optical reversal of 90in polarization-sensitive photodetection,angle-resolved absorption spectra,and azimuth-dependent reflectance difference microscopy(ADRDM)from VIS to the NIR region,as opposed to other nanoribbon-based polarization-sensitive photodetectors.This work paves the way for utilizing photovoltaic photodetectors based on low-dimensional materials for broad-spectrum polarized photodetection. | Ruixue Bai Tao Xiong Jinshu Zhou Yue-Yang Liu Wanfu Shen Chunguang Hu Faguang Yan Kaiyou Wang Dahai Wei Jingbo Li Juehan Yang Zhongming Wei | 2022 | InfoMat2022，4，3： | 2 |
| 2 | Intercalation of Two-dimensional Layered Materials显示文摘Two-dimensional(2D)layered materials have attracted great attention due to their unique electrical,optical,thermal and mechanical properties.2D layered materials have miique van der Waals gaps,thus the foreign substance,such as atoms,molecules and ions,can be inserted into the gaps to change the physical and chemical properties of 2D layered materials,which is conducive to realize their multi-fimctional application.Herein,we present a critical review of recent research progress of 2D intercalated materials,including the synthesizing metliods,theoretical calculation,characterization and multifunctional application.Finally,we will summarize llie current challenges and future opportunities in the development of 2D intercalated materials. | ZHOU Xinyun YANG Juehan ZHONG Mianzeng XIA Qinglin LI Bo DUAN Xidong WEI Zhongming | 2020 | Chemical Research in Chinese Universities2020，36，4： | 1 |
| 3 | Photodetectors based on 2D material/Si heterostructure显示文摘In recent years,low-dimensional materials especially 2D materials have attracted wide attention due to their novel proprieties.Plenty of devices with excellent performance have been made for different applications basing on 2D materials.In order to further explore the advantages of 2D materials and integrating them into semiconductor fabrication lines,the 2D material/Si heterostructure-based photodetectors played important roles in many different domains due to their price advantage,mature manufacturing craft and good compatibility to integrated circuits. | Jingshu Zhou Juehan Yang Zhongming Wei | 2020 | Journal of Semiconductors2020，41，8： | 1 |
| 4 | Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity显示文摘 | Zidong ZHANG Juehan YANG Fuhong MEI Guozhen SHEN | 2018 | Frontiers of Optoelectronics2018，11，3： | 1 |
| 5 | Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS_(2) homojunction显示文摘A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic devices.Here,we construct a two-dimensional(2D)Fe doped SnS_(2)(Fe-SnS_(2))homogeneous junction and investigate its electromagnetic transport feature.The Fe-SnS_(2) homojunction device showed large positive and unsatur-ated magnetoresistance(MR)of 1800%in the parallel magnetic field and 600%in the vertical magnetic field,indicating an obvi-ous anisotropic MR feature.In contrast,The MR of Fe-SnS_(2) homojunction is much larger than the pure diamagnetic SnS_(2) and most 2D materials.The application of a gate voltage can regulate the MR effect of Fe-SnS_(2) homojunction devices.Moreover,the stability of Fe-SnS_(2) in air has great application potential.Our Fe-SnS_(2) homojunction has a significant potential in future mag-netic memory applications. | Jingzhi Fang Huading Song Bo Li Ziqi Zhou Juehan Yang Benchuan Lin Zhimin Liao Zhongming Wei | 2022 | Journal of Semiconductors2022，43，9： | 0 |
| 6 | Optical and electronic anisotropy of a 2D semiconductor SiP显示文摘Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at present.As a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties.Herein,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect transistor.In addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it.In various measurements,SiP exhibits obvious anisotropy and good photoelectric performance.This work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices. | Shijun Hou Zhengfeng Guo Tao Xiong Xingang Wang Juehan Yang Yue-Yang Liu Zhi-Chuan Niu Shiyuan Liu Bing Liu Shenqiang Zhai Honggang Gu Zhongming Wei | 2022 | Nano Research2022，15，9： | 0 |
| 7 | Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group Ⅳ-Ⅵ semiconductor tin selenide显示文摘Tin selenide(SnSe)has attracted considerable interest recently on account of its low-symmetry lattice structure,great compatibility with key semiconductor technology,and remarkable electrical and optical performance.SnSe-based polarization-sensitive photodetectors show promising application prospects because of their fast response and excellent photoelectric performance.Here,an in-plane anisotropic SnSe nanosheet was synthesized and reported in detail by applying angle-resolved polarized Raman spectroscopy(ARPRS),polarization-resolved optical microscopy(PROM),angle-resolved optical absorption spectroscopy(AROAS),and other crystal structure characterization methods.Moreover,SnSe crystals exhibit superior polarization detection performance with a high anisotropic photocurrent ratio(2.31 at 1064 nm)due to the structure formed by the Van der Waals superposition of covalently bonded atomic layers.Furthermore,SnSe-based photodetectors have high responsivity(9.27 A/W),high detectivity(4.08×10^(10)Jones),and fast response(in the order of nanoseconds).These results suggest a new method for fabricating 2D fast-response polarization-sensitive photodetectors in the future. | Yali Yu Tao Xiong Zhengfeng Guo Shijun Hou Juehan Yang Yue-Yang Liu Honggang Gu Zhongming Wei | 2022 | Fundamental Research2022，2，6： | 0 |
| 8 | Polarization sensitive photodetector based on quasi-1D ZrSe_(3)显示文摘The in-plane anisotropy of transition metal trichalcogenides(MX_(3))has a significant impact on the molding of materi-als and MX_(3) is a perfect choice for polarized photodetectors.In this study,the crystal structure,optical and optoelectronic aniso-tropy of one kind of quasi-one-dimensional(1D)semiconductors,ZrSe_(3),are systematically investigated through experiments and theoretical studies.The ZrSe_(3)-based photodetector shows impressive wide spectral response from ultraviolet(UV)to near in-frared(NIR)and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^(-1) and detectivity of~106 at 532 nm.Moreover,the dichroic ratio of ZrSe_(3)-based polarized photodetector is around 1.1 at 808 nm.This study suggests that ZrSe_(3) has potential in optoelectronic applications and polarization detectors. | Xingang Wang Tao Xiong Kaiyao Xin Juehan Yang Yueyang Liu Zeping Zhao Jianguo Liu and Zhongming Wei | 2022 | Journal of Semiconductors2022，43，10： | 0 |
| 9 | Wavelength-selectivity polarization dependence of optical absorption and photoresponse in SnS nanosheets显示文摘The optical and optoelectronic characteristics of SnS nanosheets with strong anisotropic crystal structure are researched.Transmission electron microscopy and polarized Raman spectra are used to determine the crystal orientation of SnS nanosheets.The photodetector based on SnS nanosheets exhibits the carrier mobility of 37.75 cm^(2)/V·s,photoresponsivity of 310.5 A/W and external quantum efficiency of 8.56×10^(4)%at 450 nm.Optical absorption around the absorption edge presents obvious polarization sensitivity with the highest optical absorption dichroic ratio of 3.06 at 862 nm.Due to anisotropic optical absorption,the polarized photocurrent appears as the periodic change affected by the polarized direction of the incident light at 808 nm.Overall,SnS nanosheets show good potential in the future application of the polarized photodetectors for specific wavelength. | Yu Cui Ziqi Zhou Xinghua Wang Xiaoting Wang Zhihui Ren Longfei Pan Juehan Yang | 2021 | Nano Research2021，14，7： | 0 |
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