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| 1 | Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction显示文摘Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures. | Wenkai Zhu Xia Wei Faguang Yan Quanshan Lv Ce Hu Kaiyou Wang | 2019 | Journal of Semiconductors2019，40，9： | 6 |
| 2 | Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions显示文摘A magnetic tunnel junction(MTJ)is the core component in memory technologies,such as the magnetic random-access memory,magnetic sensors and programmable logic devices.In particular,MTJs based on twodimensional van der Waals(vd W)heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices.However,their operation at room temperature remains a challenge.Here,we report a large tunnel magnetoresistance(TMR)of up to 85%at room temperature(T=300 K)in vdW MTJs based on a thin(<10 nm)semiconductor spacer WSe_(2)layer embedded between two Fe_(3)GaTe_(2e)lectrodes with intrinsic above-room-temperature ferromagnetism.The TMR in the MTJ increases with decreasing temperature up to 164%at T=10 K.The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art. | Wenkai Zhu Shihong Xie Hailong Lin Gaojie Zhang Hao Wu Tiangui Hu Ziao Wang Xiaomin Zhang Jiahan Xu Yujing Wang Yuanhui Zheng Faguang Yan Jing Zhang Lixia Zhao Amalia Patanè Jia Zhang Haixin Chang Kaiyou Wang | 2022 | Chinese Physics Letters2022，39，12： | 2 |
| 3 | Polarization-sensitive and wide-spectrum photovoltaic detector based on quasi-1D ZrGeTe_(4)nanoribbon显示文摘Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)region.However,the narrow bandgap can cause noise owing to the high dark current in photodetectors.This article reports quasi-1D ZrGeTe_(4)nanoribbonbased photodetectors with low dark current and broadband polarization detection.The photodetector was fabricated by evaporating 50-nm-thick Au electrodes on a ZrGeTe_(4)nanoribbon.Benefiting from the photovoltaic characteristics in the ZrGeTe_(4)nanoribbon and Au electrodes,these photodetectors can operate without bias voltage,with decreased dark current,and improved device performance.Furthermore,the quasi-1D ZrGeTe_(4)nanoribbon-based photodetectors demonstrate a polarization sensitivity in a broadband from visible(VIS)to the NIR region,such as a high photoresponsivity of 625.65 mA W1,large external quantum efficiency of 145.9%at 532 nm,and photocurrent anisotropy ratio of 2.04 at 1064 nm.They exhibit a novel perpendicular optical reversal of 90in polarization-sensitive photodetection,angle-resolved absorption spectra,and azimuth-dependent reflectance difference microscopy(ADRDM)from VIS to the NIR region,as opposed to other nanoribbon-based polarization-sensitive photodetectors.This work paves the way for utilizing photovoltaic photodetectors based on low-dimensional materials for broad-spectrum polarized photodetection. | Ruixue Bai Tao Xiong Jinshu Zhou Yue-Yang Liu Wanfu Shen Chunguang Hu Faguang Yan Kaiyou Wang Dahai Wei Jingbo Li Juehan Yang Zhongming Wei | 2022 | InfoMat2022，4，3： | 2 |
| 4 | DEAP1 encodes a fasciclin-like arabinogalactan protein required for male fertility in rice显示文摘Arabinogalactan proteins(AGPs)are widely distributed in plant cells.Fasciclin-like AGPs(FLAs)belong to a subclass of AGPs that play important roles in plant growth and development.However,little is known about the biological functions of rice FLA.Herein,we report the identification of a male-sterile mutant of DEFECTIVE EXINE AND APERTURE PATTERNING1(DEAP1)in rice.The deap1 mutant anthers produced aberrant pollen grains with defective exine formation and a flattened aperture annulus and exhibited slightly delayed tapetum degradation.DEAP1 encodes a plasma membrane-associated member of groupⅢplant FLAs and is specifically and temporally expressed in reproductive cells and the tapetum layer during male development.Gene expression studies revealed reduced transcript accumulation of genes related to exine formation,aperture patterning,and tapetum development in deap1 mutants.Moreover,DEAP1 may interact with two rice D6 PROTEIN KINASE-LIKE3 s(OsD6PKL3s),homologs of a known Arabidopsis aperture protein,to affect rice pollen aperture development.Our findings suggested that DEAP1 is involved in male reproductive development and may affect exine formation and aperture patterning,thereby providing new insights into the molecular functions of plant FLAs in male fertility. | Dan Zhou Ting Zou Kaixuan Zhang Pingping Xiong Fuxing Zhou Hao Chen Gongwen Li Kaiyou Zheng Yuhao Han Kun Peng Xu Zhang Shangyu Yang Qiming Deng Shiquan Wang Jun Zhu Yueyang Liang Changhui Sun Xiumei Yu Huainian Liu Lingxia Wang Ping Li Shuangcheng Li | 2022 | Journal of Integrative Plant Biology2022，64，7： | 2 |
| 5 | Electrically function-switchable magnetic domain-wall memory显示文摘Versatile memory is strongly desired for end users,to protect their information in the information era.In particular,bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent important data being tampered with.However,no such switchable memory has been reported.We demonstrate that the rewritable function can be converted into read-only function by applying a sufficiently large current pulse in a U-shaped domain-wall memory,which comprises an asymmetric Pt/Co/Ru/AlOx heterostructure with strong D zyaloshinskii-Moriya interaction.Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate are demonstrated.Furthermore,we confirm that the information can be stored in rewritable or read-only states at bit level according to the security needs of end users.Our work not only provides a solution for personal confidential data,but also paves the way for developing multifunctional spintronic devices. | Yu Sheng Weiyang Wang Yongcheng Deng Yang Ji Houzhi Zheng Kaiyou Wang | 2023 | National Science Review2023，10，10： | 0 |
| 6 | Spin logic operations based on magnetization switching by asymmetric spin current显示文摘Spintronic devices based on spin orbit torques(SOT)exhibit advantages in low power consumption,high speed,reconfigurability,and high endurance,which offers the prospect of in-memory computing based on spin logic devices.By designing a local spin current gradient,the magnetization can be switched deterministically by asymmetric spin currents without external magnetic field using micromagnetic simulations,where an additional out of plane effective field can be generated by the spin gradient.Through capping half of the Pt/Co/Pt SOT devices with Pt strip,we demonstrate the field-free deterministic currentinduced magnetization switching experimentally.Finally,we design AND,NAND,OR,and NOR Boolean logic gates based on these devices,which could be used as building blocks for programmable and stateful logic operations. | Yucai LI Nan ZHANG Kaiyou WANG | 2022 | Science China(Information Sciences)2022，65，2： | 0 |
| 7 | Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary显示文摘Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix.Hence, their presence can have significant impacts on the properties of devices.Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization.Here, we fabricate a 36.8°Sr RuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance.We identify its atomic arrangement, including oxygen,using scanning transmission electron microscopy and spectroscopy.Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance occurs because of dramatically reduced magnetic moments at the boundary.The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order. | Xujing Li Li Yin Zhengxun Lai Mei Wu Yu Sheng Lei Zhang Yuanwei Sun Shulin Chen Xiaomei Li Jingmin Zhang Yuehui Li Kaihui Liu Kaiyou Wang Dapeng Yu Xuedong Bai Wenbo Mi Peng Gao | 2020 | National Science Review2020，7，4： | 0 |
| 8 | All-electrical switching of a topological non-collinear antiferromagnet at room temperature显示文摘Non-collinear antiferromagnetic Weyl semimetals,combining the advantages of a zero stray field and ultrafast spin dynamics,as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions,have attracted extensive interest.However,the all-electrical control of such systems at room temperature,a crucial step toward practical application,has not been reported.Here,using a small writing current density of around 5×10^(6)A·cm^(-2),we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn_(3)Sn,with a strong readout signal at room temperature in the Si/SiO_(2)/Mn_(3)Sn/AlO_(x)structure,and without external magnetic field or injected spin current.Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn_(3)Sn itself.Our findings pave the way for the development of topological antiferromagnetic spintronics. | Yongcheng Deng Xionghua Liu Yiyuan Chen Zongzheng Du Nai Jiang Chao Shen Enze Zhang Houzhi Zheng Hai-Zhou Lu Kaiyou Wang | 2023 | National Science Review2023，10，2： | 0 |
| 9 | Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices显示文摘We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices.We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying the out of plane magnetic field.After low temperature annealing,the magnetic easy axis of the AlGaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4.However,the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device. | CAO YuFei LI YanYong LI YuanYuan WEI GuanNan JI Yang WANG KaiYou | 2014 | Science China(Physics,Mechanics & Astronomy)2014，57，8： | 0 |
| 10 | The effect of Bi composition on the electrical properties of InP1-xBix显示文摘Ⅲ-ⅤSemiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties[1,2].Previous studies have been primarily focused on the growth and optical properties of the GaAs-based bismuthides[3],while the properties of other dilute bismides are less well understood.Berding et al.[4]theoretically predicted that InPBi is expected to be | GuanNan Wei Xing Dai Qi Feng WenGang Luo YiYang Li Kai Wang LiYao Zhang WenWu Pan ShuMin Wang ShenYuan Yang KaiYou Wang | 2017 | Science China(Physics,Mechanics & Astronomy)2017，60，4： | 0 |
| 11 | Oscillation of current-induced interfacial spins reorientation in a like-synthetic antiferromagnet/antiferromagnet system显示文摘Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently desired.In this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure devices.We found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida model.Our finding opens a new route for understanding and using the AFM interfacial spins in spintronics. | XiongHua Liu YongCheng Deng XiuKai Lan RunZe Li KaiYou Wang | 2021 | Science China(Physics,Mechanics & Astronomy)2021，64，6： | 0 |
| 12 | Erratum to: The effect of Bi composition on the electrical properties of InP1-xBix [Sci. China-Phys. Mech. Astron. 60, 047022 (2017)]显示文摘 | GuanNan Wei Xing Dai Qi Feng WenGang Luo YiYang Li Kai Wang LiYao Zhang WenWu Pan ShuMin Wang ShenYuan Yang KaiYou Wang | 2018 | Science China(Physics,Mechanics & Astronomy)2018，61，5： | 0 |
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