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20篇 您的检索式：作者名="Dora Y"

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	题名	作者	年代	出处	被引量
1	Highbreakdown voltage achieved on AlGaN/GaN HEMTswith integrated slant field plates 显示文摘	Dora Y Chakraborty A McCarthy L	2006	IEEE ElectronDevice Lett2006，27，9：	1
2	High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plates显示文摘	XING H L DORA Y CHINI A	2004	IEEE EDL2004，25，4：	1
3	High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plate显示文摘	LI Xing-hui DORA Y CHINI A	2004	IEEE Electron Devices2004，25，4：	1
4	High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates显示文摘	XING H L DORA Y CHINI A	2004	IEEE Electron Device Letters2004，25，4：	1
5	High breakdown voltage A1GaN/GaN HEMTs achieved by multiple field plate显示文摘	XING H L DORA Y CHINI A	2004	IEEE Electron Device Lett2004，25，4：	1
6	High Breakdown Voltage A1-GaN-GaN HEMTs Achieved By Multiple Field Plates 显示文摘	Xing H L Dora Y Chini A	2004	IEEE Electron Dev Lett2004，，25：	1
7	High Breakdown Voltage AlGaN-GaN HEMTs Achieved by Multiple Field Plates显示文摘	Xing Huili Dora Y Chini A	2004	IEEE Electron Devices Letters2004，25，4：	1
8	Regional anticoagulation during hemodialysis using citrate显示文摘	Morita Y Johnson RW Dora RE	1961	Am J Med Sci1961，242，：	1
9	High breakdown voltage A1GaN-GaN HEMTs achieved by multiple field plates 显示文摘	Xing Huili Dora Y Chini A	2004	IEEE Electron Device Letters2004，25，4：	1
10	Synthesis of biodiesel via acid catalysis显示文摘	Edgar L Liu Y J Dora E L	2005	Industrial & engineering chemistry research2005，44，14：	1
11	High breakdown voltage achieved on Al Ga N/Ga N HEMTs with integrated slant field plates显示文摘	DORA Y CHAKRABORTY A MCCARTHY L	2006	IEEE Electron Device Lett2006，27，9：	1
12	Neuroprotective effects of an adenoviral vector expressing the glucose transporter:a detailed description of the mediating cellular events显示文摘	Anurag Gupta Dora Y Sapolsky	2001	Brain Res2001，908，1：	1
13	Nuclear receptor DAX-1 recruits nuclear receptor corepressor N-CoB to steroidogenic factor 1显示文摘	Crawford PA Dora C Sadovsky Y	1998	Mol Cell Biol1998，18，5：	1
14	Characterisation of reversed-phase liquid-chromatographic tests:Rational column classification by a minimal number of column test parameters显示文摘	DORA V VANDER Y HEYDEN V	2003	J Chromatogr A2003，1012，：	1
15	High breakdown voltage AlGaN/GaN HEMTs a chieved by multiple field plate显示文摘	Xing Huili Dora Y Chini A	2004	IEEE Electron Device Lett2004，25，4：	1
16	High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates显示文摘	XING H DORA Y CHINI A	2004	IEEE Electron Device Lett2004，25，4：	1
17	High breakdown voltage achieved on A1GaN/GaN HEMTs withintegrated slant field plates 显示文摘	DORA Y CHAKRABORT Y A MCCARTHY L	2006	IEEE Electron Device Let- ters2006，27，9：	1
18	Neuroprotective effects of an adenoviral vector expressing the glucose transporter:a detailed description of the mediating cellular events显示文摘	Anurag Gupta Dora Y Sapolsky	2001	Brain Res2001，908，1：	1
19	High breakdown voltage AIGaN/GaN HEMTs achieved by multiple field plates显示文摘	Xing Huili Dora Y Chini A	2004	IEEE Electron Device Letters2004，25，4：	1
20	Optimization of AlGaN/GaN HEMTs for high frequency operation显示文摘	PALACIOS T DORA Y CHAKRABORTY A	2006	Physics Status Solidi:A2006，203，7：	1

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