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61篇 您的检索式：期刊名="IEEE EDL"

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	题名	作者	年代	出处	被引量
1	Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics 显示文摘	KERBER A CARTIER E PANTISANO L	2003	IEEE EDL2003，24，2：	1
2	Impact of shallow source/drain on the short-channel characteristics of pMOSFETs 显示文摘	KURATA H SUGII T	1999	IEEE EDL1999，20，2：	1
3	Improved Breakdown Voltage in GaAsMESFET's Utilizing Surface Layers of GaAsGrown at Low Temperature by MBE显示文摘	Hwang Y Lee J H	1990	IEEE EDL1990，11，12：	1
4	RTD/ CMOS nanoelectronic circuits:thin-film inp-based resonant tunneling diodes integration with CMOS circuits 显示文摘	IBERGMAN J CHANG J JOO Y	1999	IEEE EDL1999，20，3：	1
5	Power and linerarity characteristics of field-plated recessed-gate AIGaN/GaN HEMTs 显示文摘	CHINI A BUTTARI D COFFIE R	2004	IEEE EDL2004，25，5：	1
6	Planar integration of a resonant-tunneling diode with pHEMT using a novel proton implantation technique 显示文摘	CHEN C L MAHONEY L J CALAWA S D	1998	IEEE EDL1998，19，12：	1
7	New self- aligned planar resonant-tunneling diodes for monolithic circuits 显示文摘	CHEN C L MATHEWS R H MAHONEY L J	1997	IEEE EDL1997，18，10：	1
8	New resonant tunneling devices with maltiple negative resistance regions and high room-temperature peak-to-valley ratio显示文摘	SEN S CAPASSO F SIVCO D	1988	IEEE EDL1988，9，8：	1
9	30 W/ram GaN HEMTs by field plate optimilation 显示文摘	WU Y F SAXLER A MOORE M	2004	IEEE EDL2004，25，3：	1
10	High-speed E- mode InAs QW MOSFETs with AlaO3 insulator for future RF applications 显示文摘	KIMD H KIM T W HILLR J W	2013	IEEE EDL2013，34，2：	1
11	High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plates显示文摘	XING H L DORA Y CHINI A	2004	IEEE EDL2004，25，4：	1
12	MOS characteristics of uhrathin NO- grown oxynitrides 显示文摘	BHAT M KIM J YAN J	1994	IEEE EDL1994，15，10：	1
13	A 120 W boost converter operation using a high-voltage GaN-HEMT显示文摘	WATARU S TOMOHIRO N YORITO K	2008	IEEE EDL2008，29，1：	1
14	30-nm InAs PHEMTs with fT = 644 GHz and fMAX = 681 GHz 显示文摘	KIM D H del ALAMO J A	2010	IEEE EDL2010，31，8：	1
15	Improved reliability of A1GaN-GaN HEMTs using an NH3 plasma treatment prior to SiN passivation 显示文摘	ANDREW P E JEFFREY A M STEVEN C B	2005	IEEE EDL2005，26，4：	1
16	Physics-based RTD current-voltage equation 显示文摘	SCHULMAN J N DE LOS SANTOS H J CHOW D H	1996	IEEE EDL1996，17，5：	1
17	Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's 显示文摘	PAN Y NG K K WEI C C	1994	IEEE EDL1994，15，12：	1
18	AlGaN/ GaN recessed MIS-gato HFET with high-threshold-voltage normally-off operation for power electronics applications显示文摘	OKA T NOZAWA T	2008	IEEE EDL2008，29，7：	1
19	Lg : 80 nm trigate quantum-well In0 s3 Ga()47 As metal-oxide-semiconductor field effect transistors with A1203/HfO2 gate-stack 显示文摘	KIM T W KOH D H SHIN C S	2015	IEEE EDL2015，36，3：	1
20	Power semiconductor devices figure of merit for high frequency application显示文摘		1989	IEEE EDL1989，10，10：	1

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