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| 1 | Molten salt synthesis of porous carbon and its application in supercapacitors: A review显示文摘Carbon materials have taken an important role in supercapacitor applications due to their outstanding features of large surface area,low price,and stable physicochemical properties.Considerable research efforts have been devoted to the development of novel synthesis strategy for the preparation of porous carbon materials in recent years.In particular,molten salt strategy represents an emerging and promising method,whereby it has shown great potential in achieving tailored production of porous carbon.It has been proved that the molten salt-assisted production of carbon via the direct carbonization of carbonaceous precursors is an effective approach.Furthermore,with the incorporation of electrochemical technology,molten salt synthesis of porous carbon has become flexible and diversiform.Here,this review focuses on the mainstream molten salt synthesis strategies for the production of porous carbon materials,which includes direct molten salt carbonization process,capture and electrochemical conversion of CO_(2)to value-added carbon,electrochemical exfoliation of graphite to graphene-based materials,and electrochemical etching of carbides to new-type carbide-derived carbon materials.The reaction mechanisms and recent advances for these strategies are reviewed and discussed systematically.The morphological and structural properties and capacitive performances of the obtained carbon materials are summarized to reveal their appealing points for supercapacitor applications.Moreover,the opportunities and challenges of the molten salt synthesis strategy for the preparation of carbon materials are also discussed in this review to provide inspiration to the future researches. | Zhongya Pang Guangshi Li Xiaolu Xiong Li Ji Qian Xu Xingli Zou Xionggang Lu | 2021 | Journal of Energy Chemistry2021，30，10： | 7 |
| 2 | Continuous electrodeposition of silicon and germanium micro/nanowires from their oxides precursors in molten salt显示文摘In recent years,silicon(Si)and germanium(Ge)materials have been considered as promising highperformance anode materials for lithium-ion batteries due to their high theoretical capacities.It is of great importance to design and synthesize micro/nanostructured Si and Ge materials.In this work,we demonstrated that Si,Ge and SiGe micro/nanowires can be continuously synthesized from their oxides precursors through molten salt electrodeposition.The electrochemical synthesis processes have been investigated systematically,and the deposited Si,Ge and SiGe micro/nanowires have been characterized and compared.The results show that the micro/nanostructured Si and Ge materials with tunable morphology can be facilely and continuously produced via molten salt electrodeposition.The electrodeposition process generally includes calcium oxide-assisted dissolution and electrodeposition processes,and the morphologies of the deposited Si and Ge products can be controlled by varying conditions.Si micro/nanowires,Si films,Ge micro/nanowires,and Ge particles can be continuously synthesized in a controlled manner. | Xingli Zou Li Ji Zhongya Pang Qian Xu Xionggang Lu | 2020 | Journal of Energy Chemistry2020，29，5： | 3 |
| 3 | A direct electrochemical route from oxides to Ti–Si intermetallics显示文摘 | Xingli Zou Xionggang Lu Chonghe Li Zhongfu Zhou | 2010 | Electrochimica Acta2010，，18： | 2 |
| 4 | An integrated strategy towards the facile synthesis of core-shell SiC-derived carbon@N-doped carbon for high-performance supercapacitors显示文摘Porous active core-shell carbon material with excellent synergistic effect has been regarded as a prospective material for supercapacitors.Herein,we report an integrated method for the facile synthesis of carbide-derived carbon(CDC)encapsulated with porous N-doped carbon(CDC@NC)towards highperformance supercapacitors.Polydopamine(PDA)as nitrogen and carbon sources was simply coated on SiC nanospheres to form SiC@PDA,which was then directly transformed into CDC@NC via a onestep molten salt electro-etching/in-situ doping process.The synthesized CDC@NC with hierarchically porous structure has a high specific surface area of 1191 m^(2) g^(-1).The CDC core and NC shell are typical amorphous carbon and more ordered N-doped carbon,respectively.Benefitting from its unique dual porous structures,the CDC@NC demonstrates high specific capacitances of 255 and 193 F g^(-1) at 0.5 and20 A g^(-1),respectively.The reaction mechanism of the electro-etching/in-situ doping process has also been investigated through experimental characterizations and theoretical density functional theory calculations.It is suggested that the molten salt electro-etching/in-situ doping strategy is promising for the synthesis of active core-shell porous carbon materials with synergistic properties for supercapacitors without the need for additional doping/activation processes. | Zhongya Pang Guangshi Li Xingli Zou Chenteng Sun Conghui Hu Wei Tang Li Ji Hsien-Yi Hsu Qian Xu Xionggang Lu | 2021 | Journal of Energy Chemistry2021，30，5： | 2 |
| 5 | Direct selective extraction of titanium silicide Ti 5 Si 3 from multi-component Ti-bearing compounds in molten salt by an electrochemical process显示文摘 | Xingli Zou Xionggang Lu Zhongfu Zhou Chonghe Li Weizhong Ding | 2011 | Electrochimica Acta2011，，24： | 2 |
| 6 | Direct selective extraction' of titanium silicide Tis Si3 from multi - component Ti - beafimg compounds in molten salt by an electrochemical process 显示文摘 | Zou Xingli Lu Xionggang Zhou Zhongfu | 2011 | Electrochimica Acta2011，56，24： | 1 |
| 7 | Preparation of TiFe based hydrogen storage alloy by SOM method 显示文摘 | wYe Xiaosu Lu Xionggang Li Chonghe Ding Weizhong Zou Xingli Gao Yonghui Zhong Qingdong | 2010 | International Journal of Hydrogen Energy2010，4，98： | 1 |
| 8 | Direct electrosynthesis of Ti 5 Si 3 /TiC composites from their oxides/C precursors in molten calcium chloride显示文摘 | Xingli Zou Xionggang Lu Zhongfu Zhou Chonghe Li | 2012 | Electrochemistry Communications2012，，： | 1 |
| 9 | Direct selective extraction of titanium silicide Ti 5 Si 3 from multi-component Ti-bearing compounds in molten salt by an electrochemical process显示文摘 | Xingli Zou Xionggang Lu Zhongfu Zhou Chonghe Li Weizhong Ding | 2011 | Electrochimica Acta2011，，24： | 1 |
| 10 | Green Electrochemical Process Solid-Oxide Oxygen-Ion-Conducting Membrane (SOM): Direct Extraction of Ti-Fe Alloys from Natural Ilmenite显示文摘 | Xionggang Lu Xingli Zou Chonghe Li Qingdong Zhong Weizhong Ding Zhongfu Zhou | 2012 | Metallurgical and Materials Transactions B2012，，3： | 1 |
| 11 | Free-standing SnNb_(2)O_(6)@CSN film as flexible anode for high performance sodium-ion batteries显示文摘Free-standing electrodes are promising candidates for flexible rechargeable batteries, toward the application of flexible energy storage devices, due to their merits of additive-free, lightweight, and high energy density. Herein, we report a free-standing SnNb_(2)O_(6)@CSN flexible film with SnNb_(2)O_(6) encapsulated in 3D carbon skeleton nanofibers by electrospinning and carbonization processes as flexible anode for sodium-ion batteries(SIBs). The 3D carbon skeleton nanofibers serve as ion/electron transport pathway to improve the electrochemical reaction kinetics and meanwhile alleviate the volume changes of SnNb_(2)O_(6) during charge-discharge processes. The as-constructed half-cell(SnNb_(2)O_(6)@CSN‖Na) exhibits excellent cycling stability of 99.2 m Ah/g at 0.5 A/g after 950 cycles(coulombic efficiency of ~100%) and a high rate performance of 108.6 mAh/g at 10 A/g. In addition, the pouch cell can light up the LEDs at different bending angles(0°, 90°, 180°). This research shows a promising anode material for flexible energy storage electronics. | Xuemin Yin Tao Liu Xiuping Yin Xiaochen Feng Yiming Liu Qinhao Shi Xingli Zou Yufeng Zhao | 2023 | Chinese Chemical Letters2023，34，7： | 0 |
| 12 | Highly efficient and stable electrocatalyst for hydrogen evolution by molybdenum doped Ni-Co phosphide nanoneedles at high current density显示文摘There is an increasingly urgent need to develop cost-effective electrocatalysts with high catalytic activity and stability as alternatives to the traditional Pt/C in catalysts in water electrolysis.In this study,microspheres composed of Mo-doped NiCoP nanoneedles supported on nickel foam were prepared to address this challenge.The results show that the nanoneedles provide sufficient active sites for efficient electron transfer;the small-sized effect and the micro-scale roughness enhance the entry of reactants and the release of hydrogen bubbles;the Mo doping effectively improves the electrocatalytic performance of NiCoP in alkaline media.The catalyst exhibits low hydrogen evolution overpotentials of 38.5 and 217.5 mV at a current density of 10 mA·cm^(-2) and high current density of 500 mA·cm^(-2),respectively,and only 1.978 V is required to achieve a current density of 1000 mA·cm^(-2) for overall water splitting.Density functional theory(DFT)calculations show that the improved hydrogen evolution performance can be explained as a result of the Mo doping,which serves to reduce the interaction between NiCoP and intermediates,optimize the Gibbs free energy of hydrogen adsorption(△G_(*H)),and accelerate the desorption rate of *OH.This study provides a promising solution to the ongoing challenge of designing efficient electrocatalysts for high-current-density hydrogen production. | Chengyu Huang Zhonghong Xia Jing Wang Jing Zhang Chenfei Zhao Xingli Zou Shichun Mu Jiujun Zhang Xionggang Lu Hong Jin Fan Shengjuan Huo Yufeng Zhao | 2024 | Nano Research2024，17，3： | 0 |
| 13 | Wafer-Scale Synthesis of WS_(2) Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition显示文摘Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics.In this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesized through atomic layer deposition(ALD)on 8-inchα-Al_(2)O_(3)/Si wafers,2-inch sapphire,and 1 cm^(2)GaN substrate pieces.The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing.WS_(2)n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes.X-ray photoelectron spectroscopy,Raman spectroscopy,and Hall measurements confirmed the effective substitutional doping with Nb.The on/off ratio and electron mobility of WS_(2)n-FET are as high as 105 and 6.85 cm^(2)V^(-1)s^(-1),respectively.In WS_(2)p-FET with 15-cycle Nb doping,the on/off ratio and hole mobility are 10 and 0.016 cm^(2)V^(-1)s^(-1),respectively.The p-n structure based on n-and p-type WS_(2)films was proved with a 10^(4) rectifying ratio.The realization of controllable in situ Nb-doped WS_(2)films paved a way for fabricating wafer-scale complementary WS_(2)FETs. | Hanjie Yang Yang Wang Xingli Zou Rongxu Bai Zecheng Wu Sheng Han Tao Chen Shen Hu Hao Zhu Lin Chen David W.Zhang Jack C.Lee Xionggang Lu Peng Zhou Qingqing Sun Edward T.Yu Deji Akinwande Li Ji | 2022 | Research2022，，1： | 0 |
| 14 | Wafer-Scale Synthesis of WS_(2)Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition显示文摘Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics.In this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesized through atomic layer deposition(ALD)on 8-inchα-Al_(2)O_(3)/Si wafers,2-inch sapphire,and 1 cm^(2)GaN substrate pieces.The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing.WS_(2)n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes.X-ray photoelectron spectroscopy,Raman spectroscopy,and Hall measurements confirmed the effective substitutional doping with Nb.The on/off ratio and electron mobility of WS_(2)n-FET are as high as 105 and 6.85 cm^(2)V^(-1)s^(-1),respectively.In WS_(2)p-FET with 15-cycle Nb doping,the on/off ratio and hole mobility are 10 and 0.016 cm^(2)V^(-1)s^(-1),respectively.The p-n structure based on n-and p-type WS_(2)films was proved with a 10^(4)rectifying ratio.The realization of controllable in situ Nb-doped WS_(2)films paved a way for fabricating wafer-scale complementary WS_(2)FETs. | Hanjie Yang Yang Wang Xingli Zou Rongxu Bai Zecheng Wu Sheng Han Tao Chen Shen Hu Hao Zhu Lin Chen David W.Zhang Jack C.Lee Xionggang Lu Peng Zhou Qingqing Sun Edward T.Yu Deji Akinwande Li Ji | 2021 | Research2021，，1： | 0 |
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