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您的检索式：作者名="Yanbang Chu"
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| 1 | Layer-by-layer epitaxy of multi-layer MoS_(2) wafers显示文摘The 2D semiconductor of MoShas great potential for advanced electronics technologies beyond silicon.So far,high-quality monolayer MoSwafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown.In addition to the monolayer,multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer.However,achieving high-quality multi-layer MoSwafers remains a challenge.Here we report the growth of high-quality multi-layer Mo S_(2) 4-inch wafers via the layer-by-layer epitaxy process.The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six.Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers.Significant improvements in device performances were found in thicker-layer field-effect transistors(FETs),as expected.For example,the average field-effect mobility(μFE)at room temperature(RT)can increase from~80 cm·V·sfor monolayers to~110/145 cm·V·for bilayer/trilayer devices.The highest RTμFEof 234.7 cm·V·sand record-high on-current densities of 1.70 m A·μmat Vds=2V were also achieved in trilayer MoSFETs with a high on/off ratio of>107.Our work hence moves a step closer to practical applications of 2D MoSin electronics. | Qinqin Wang Jian Tang Xiaomei Li Jinpeng Tian Jing Liang Na Li Depeng Ji Lede Xian Yutuo Guo Lu Li Qinghua Zhang Yanbang Chu Zheng Wei Yanchong Zhao Luojun Du Hua Yu Xuedong Bai Lin Gu Kaihui Liu Wei Yang Rong Yang Dongxia Shi Guangyu Zhang | 2022 | National Science Review2022，9，6： | 0 |
| 2 | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor显示文摘Excitons dominate the photonic and optoelectronic properties of a material.Although significant advancements exist in understanding various types of excitons,progress on excitons that are indirect in both real-and momentum-spaces is still limited.Here,we demonstrate the real-and momentum-indirect neutral and charged excitons(including their phonon replicas)in a multi-valley semiconductor of bilayer MoS_(2),by performing electric-field/doping-density dependent photoluminescence.Together with first-principles calculations,we uncover that the observed real-and momentum-indirect exciton involves electron/hole from K/Γvalley,solving the longstanding controversy of its momentum origin.Remarkably,the binding energy of real-and momentum-indirect charged exciton is extremely large(i.e.,~59 meV),more than twice that of real-and momentum-direct charged exciton(i.e.,~24 meV).The giant binding energy,along with the electrical tunability and long lifetime,endows real-and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics. | Zhiheng Huang Yuhui Li Tao Bo Yanchong Zhao Fanfan Wu Lu Li Yalong Yuan Yiru Ji Le Liu Jinpeng Tian Yanbang Chu Xiaozhou Zan Yalin Peng Xiuzhen Li Yangkun Zhang Kenji Watanabe Takashi Taniguchi Zhipei Sun Wei Yang Dongxia Shi Shixuan Du Luojun Du Guangyu Zhang | 2023 | National Science Open2023，2，4： | 0 |
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