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| 1 | Recent advances of heterogeneously integrated Ⅲ–Ⅴ laser on Si显示文摘Due to the indirect bandgap nature,the widely used silicon CMOS is very inefficient at light emitting.The integration of silicon lasers is deemed as the‘Mount Everest’for the full take-up of Si photonics.The major challenge has been the materials dissimilarity caused impaired device performance.We present a brief overview of the recent advances of integratedⅢ-Ⅴlaser on Si.We will then focus on the heterogeneous direct/adhesive bonding enabling methods and associated light coupling structures.A selected review of recent representative novel heterogeneously integrated Si lasers for emerging applications like spectroscopy,sensing,metrology and microwave photonics will be presented,including DFB laser array,ultra-dense comb lasers and nanolasers.Finally,the challenges and opportunities of heterogeneous integration approach are discussed. | Xuhan Guo An He Yikai Su | 2019 | Journal of Semiconductors2019，40，10： | 3 |
| 2 | Metamaterial-enabled arbitrary on-chip spatial mode manipulation显示文摘On-chip spatial mode operation,represented as mode-division multiplexing(MDM),can support high-capacity data communications and promise superior performance in various systems and numerous applications from optical sensing to nonlinear and quantum optics.However,the scalability of state-of-the-art mode manipulation techniques is significantly hindered not only by the particular mode-order-oriented design strategy but also by the inherent limitations of possibly achievable mode orders.Recently,metamaterials capable of providing subwavelength-scale control of optical wavefronts have emerged as an attractive alternative to manipulate guided modes with compact footprints and broadband functionalities.Herein,we propose a universal yet efficient design framework based on the topological metamaterial building block(BB),enabling the excitation of arbitrary high-order spatial modes in silicon waveguides.By simply programming the layout of multiple fully etched dielectric metamaterial perturbations with predefined mathematical formulas,arbitrary high-order mode conversion and mode exchange can be simultaneously realized with uniform and competitive performance.The extraordinary scalability of the metamaterial BB frame is experimentally benchmarked by a record high-order mode operator up to the twentieth.As a proof of conceptual application,an 8-mode MDM data transmission of 28-GBaud 16-QAM optical signals is also verified with an aggregate data rate of 813 Gb/s(7%FEC).This user-friendly metamaterial BB concept marks a quintessential breakthrough for comprehensive manipulation of spatial light on-chip by breaking the long-standing shackles on the scalability,which may open up fascinating opportunities for complex photonic functionalities previously inaccessible. | Jinlong Xiang Zhiyuan Tao Xingfeng Li Yaotian Zhao Yu He Xuhan Guo Yikai Su | 2022 | Light(Science & Applications)2022，11，7： | 2 |
| 3 | All-optical silicon microring spiking neuron显示文摘With the rapid development of artificial intelligence and machine learning, brain-inspired neuromorphic photonics has emerged as an extremely attractive computing paradigm, promising orders-of-magnitude higher computing speed and energy efficiency compared to its electronic counterparts. Tremendous efforts have been devoted to photonic hardware implementations of mimicking the nonlinear neuron-like spiking response and the linear synapse-like weighting functionality. Here, we systematically characterize the spiking dynamics of a passive silicon microring neuron. The research of self-pulsation and excitability reveals that the silicon microring can function as an all-optical class Ⅱ resonate-and-fire neuron. The typical refractory period has been successfully suppressed by configuring the pump power above the perturbation power, hence allowing the microring neuron to operate with a speed up to roughly sub-gigahertz. Additionally, temporal integration and controllable inhibition regimes are experimentally demonstrated for the first time, to the best of our knowledge. Our experimental verification is obtained with a commercial CMOS platform, hence offering great potential for large-scale neuromorphic photonics integration. | Jinlong Xiang Yujia Zhang Yaotian Zhao Xuhan Guo Yikai Su | 2022 | Photonics Research2022，10，4： | 2 |
| 4 | High-efficiency and broadband four-wave mixing in a silicon-graphene strip waveguide with a windowed silica top layer显示文摘We experimentally demonstrate high-efficiency and broadband four-wave mixing in a silicon-graphene strip waveguide. A four-wave mixing conversion efficiency of -38.7 d B and a 3-dB conversion bandwidth of 35 nm are achieved in the silicon-graphene strip waveguide with an optimized light-graphene interaction length of 60 μm. The interaction length is controlled by a windowed area of silica layer on the silicon waveguide.Numerical simulations and experimental studies are carried out and show a nonlinear parameter γGOSas large as 10~4 W^(-1)· m^(-1). | YUXING YANG ZHENZHEN XU XINHONG JIANG YU HE XUHAN GUO YONG ZHANG CIYUAN QIU YIKAI SU | 2018 | Photonics Research2018，6，10： | 2 |
| 5 | On-chip silicon polarization and mode handling devices显示文摘 | Yong ZHANG Yu HE Qingming ZHU Xinhong JIANG Xuhan Guo Ciyuan QIU Yikai SU | 2018 | Frontiers of Optoelectronics2018，11，1： | 1 |
| 6 | Ultracompact bandwidth-tunable filter based on subwavelength grating-assisted contra-directional couplers显示文摘An ultracompact,bandwidth-tunable filter has been demonstrated using a silicon-on-insulator(SOI)wafer.The device is based on cascaded grating-assisted contra-directional couplers(GACDCs).It also involves the use of a subwavelength grating(SWG)structure.By heating one of the heaters on GACDCs,a bandwidth tunability of~6 nm is achieved.Owing to the benefit of having a large coupling coefficient between SWG and strip waveguides,the length of the coupling region is only 100 pm.Moreover,the combination of the curved SWG and the tapered strip waveguides effectively suppresses the sidelobes.The filter possesses features of simultaneous wavelength tuning with no free spectral range(FSR)limitation.A maximum bandwidth of 10 nm was experimentally measured with a high out-of-band contrast of 25 dB.Similarly,the minimum bandwidth recorded is 4 nm with an out-of-band contrast of 15 dB. | Kangnian WANG Yuan WANG Xuhan GUO Yong ZHANG An HE Yikai SU | 2021 | Frontiers of Optoelectronics2021，14，3： | 1 |
| 7 | Preface:special topic on novel optoelectronic devices显示文摘The research and development(R&D)in silicon or III/V photonics are booming and emerging as the mainstream platforms for large-scale photonic integration circuits,which offer the well-established advantages of scalable chip-wise integration with low cost at high volume and high yield,following the standard complementary metal oxide semiconductor fabrication processes in the microelectronics industry.However,the co-integration of electronics with photonics is critical for fully exploiting the high bandwidth,reducing power consumption,as well as achieving more compact footprint and lower cost.Optoelectronic devices with novel co-integration schemes and new materials with further improved functionalities are urgently needed to push beyond the limitations posed by the intrinsic material capabilities and speed restrictions at the electro-optical interfaces.Recently,considerable breakthroughs revived our understanding of these fields,providing both opportunities and challenges in this exciting area. | Ming Li Xuhan Guo | 2022 | National Science Open2022，1，3： | 0 |
| 8 | Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si显示文摘The research in silicon photonics has been booming due to its potential for lowcost,reliable,energy-efficient and high-density chip-wise integration using widely available CMOS technology,featuring the tremendous success in modulator,detector and other passive waveguide components in industry.However,the absence of efficient and reliable electrical to optical converter on Si platform has been considered as“the last piece of the puzzle”,hindered by the in-direct bandgap property of Si bulk materials.CompoundⅢ–Ⅴsemiconductor devices offer highly efficient optical light emitting sources and optical amplifiers,hence the compound semiconductor materials and devices on Si platform are drawing more and more attention nowadays as it could make possible the long-dreamed light sources on Si substrates by combining their advantages with silicon ICs,enabling the fabrication of full functional optoelectronic circuits,chip-to-chip and even system-to-system optical chips. | Huiyun Liu Yikai Su Chuanbo Li Xuhan Guo | 2019 | Journal of Semiconductors2019，40，10： | 0 |
| 9 | Noise canceled graphene-microcavity fiber laser sensor for ultrasensitive gas detection显示文摘Optical microcavities offer a promising platform for highly efficient light–matter interactions.Recently,the combination of microresonators and 2D materials in the nanoscale has further enriched the optoelectronics of microcavity geometries,spurring broad advances including lasers,nonlinear converters,modulators,and sensors.Here,we report the concept of compact dual-laser cogeneration in a graphene-microcavity fiber,which offers a way to cancel the optical common mode noises.Driven by a single 980 nm pump,orthogonally polarized laser lines are generated in a pair of degeneracy breaking modes.The two laser lines produce a heterodyne beat note at 118.96 MHz,with frequency noise down to 200 Hz~2∕Hz at 1 MHz offset,demonstrating a linewidth of 930 Hz in vacuum.This compact device enables on-line and label-free NH_(3) gas detection with high resolution,realizing a detection limit on a single pmol/L level,and a capability to quantitatively trace gas–graphene interactions.Such a combination of graphene optoelectronics and microcavity photonics demonstrates a novel physical paradigm for microlaser control and offers a new scheme for in situ chemical sensing. | YUCHEN WANG YIWEI LI YICHENG LI HAO ZHANG ZIHAN LIU YANHONG GUO ZEPING WANG JUN HE XUHAN GUO YIPING WANG BAICHENG YAO | 2023 | Photonics Research2023，11，8： | 0 |
| 10 | Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI显示文摘Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor(CMOS)compatibility.Realizing monolithic integration of Ⅲ-Ⅴ lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultradense photonic integration,which can provide considerable economical,energy-efficient and foundry-scalable onchip light sources,that has not been reported yet.Here,we demonstrate embedded InAs/GaAs quantum dot(QD)lasers directly grown on trenched silicon-on-insulator(SOI)substrate,enabling monolithic integration with buttcoupled silicon waveguides.By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy(MBE),high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template.By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture,embedded Ⅲ-Ⅴ lasers on SOI with continuous-wave lasing up to 85°C are obtained.The maximum output power of 6.8mW can be measured from the end tip of the butt-coupled silicon waveguides,with estimated coupling efficiency of approximately-6.7 dB.The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration. | Wen-Qi Wei An He Bo Yang Zi-Hao Wang Jing-Zhi Huang Dong Han Ming Ming Xuhan Guo Yikai Su Jian-Jun Zhang Ting Wang | 2023 | Light(Science & Applications)2023，12，5： | 0 |
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