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10篇 您的检索式:作者名="WIEGMANN W"
    题名 作者 年代 出处 被引量
1MBE growth and energy levels of quantm wells with special shapes显示文摘 MILLER R C WIEGMANN W 1986Surf Sci1986,174,1:1
2Quantum States of Confined Carriers in Very Thin ALxGa1-xAs-GaAs-AlxGa1-xAs Heterostructures显示文摘DINGLE R WIEGMANN W HENRY C H 1974Phys Rev Lett1974,33,:1
3Collector/emitter offset voltage in Double - heterojunction bipolar transistors显示文摘Hayes J R Gossard A C Wiegmann W 1984Electronics Letters1984,20,19:1
4Collector/emitter offset voltage in double-heterojunction bipolar transistors显示文摘Hayes J R Gossard A C Wiegmann W 1984Electronics Letters1984,20,19:1
5Band-edge electroabsorption in quantum well structures:the quantum-confined Stark effect显示文摘Miller D A B Chemla D S Damen T C Gossard A C Wiegmann W Wood T H Burrus C A 0,,22:1
6Electric field dependence of optical absorption near the bandgap of quantum well structures显示文摘Miller D A B Chemla D S Damen T C Gossard A C Wiegmann W Wood T H Burrus C A 0,,:1
7Energy Spectra of two Electron in Harmonic Quantum Well 显示文摘DINGLE R WIEGMANN W HENRY C H 1974Phys RevLett1974,33,3:1
8Application of the human factors analysis and classification system meth- odology to the cardiovascular surgery operating mom显示文摘EI Bardissi A W Wiegmann D A Dearani J A 2007The Annals of Thoracic Surgery2007,83,4:1
9Disruptions in surgical flow and their relationship to surgical errors: an exploratory investigation 显示文摘Wiegmann D A ElBardissi A W Dearani J A 2007Surgery2007,142,5:1
10Quantum States of Confined Carriers in Very Thin Aluminum Gallium Arsenide (AlxGa1-x As)-Gallium Arsenide-Aluminum Gallium Arsenide (AlxGa1-xAs) Heterostruetures 显示文摘Dingle R Wiegmann W Henry C H 1974Phys Rev Lett1974,33,14:1
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