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		题名	作者	年代	出处	被引量
	1	Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes显示文摘The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities from 34 to 201 A/cm^2.To separate the impact of current from that of temperature, the junction temperature is kept constant by adjusting the heat sink temperature. Higher current was found to strongly accelerate the optical power reduction during operation. A mathematical model for lifetime prediction is introduced.It indicates that lifetime is inversely proportional to the cube of the current density, suggesting the involvement of Auger recombinati on.	Jan Ruschel Johannes Glaab Batoul Beidoun Neysha Lobo Ploch Jens Rass Tim Kolbe Arne Knauer Markus Weyers Sven Einfeldt Michael Kneissl	2019	Photonics Research2019，7，7：	3
	2	Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs显示文摘This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based LEDs.By carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep levels.In the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice.	CARLO DE SANTI MATTEO MENEGHINI DESIREE MONTI JOHANNES GLAAB MARTIN GUTTMANN JENS RASS SVEN EINFELDT FRANK MEHNKE JOHANNES ENSLIN TIM WERNICKE MICHAEL KNEISSL GAUDENZIO MENEGHESSO ENRICO ZANONI	2017	Photonics Research2017，5，2：	2
	3	Preconditioning of c- plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation 显示文摘	Jostein K Grepstad Sven Einfeldt	1998	J Appl Phys1998，83，：	1

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