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7篇 您的检索式：作者名="Suman Ganguli"

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		题名	作者	年代	出处	被引量
	1	An overview of fractal antenna engineering research 显示文摘	Douglas H Werner and Suman Ganguly	2003	IEEE Antennas and Propagation Magazine2003，45，1：	1
	2	An Overview of Fractal Antenna Engineering Research 显示文摘	Douglas H Werner Suman Ganguly	2003	IEEE Antennas and Propagation Magazine2003，45，1：	1
	3	An Overview of Fractal Antenna Engineering Research显示文摘	Douglas H.Werner Suman Ganguly		0，，01：	1
	4	An Overview of Fractal Antenna Engineering Research显示文摘	DOUGLAS WERNER H AND SUMAN GANGULY	2003	IEEE Antennas and Propagation2003，1，：	1
	5	An Overview of Fractal Antenna Engineering Research显示文摘	Douglas Werner H and Suman Ganguly	2003	IEEE Antennas and Propagation2003，1，：	1
	6	An overview of fractal antenna engineering research 显示文摘	Douglas H W Suman Ganguly	2003	IEEE Antennas and Propa - gation2003，3，：	1
	7	Large-signal characterizations of DDR IMPATT devices based on group Ⅲ–Ⅴ semiconductors at millimeter-wave and terahertz frequencies显示文摘Large-signal(L-S) characterizations of double-drift region(DDR) impact avalanche transit time(IMPATT)devices based on group III–V semiconductors such as wurtzite(Wz) GaN, GaAs and InP have been carried out at both millimeter-wave(mm-wave) and terahertz(THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation(NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials(i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.	Aritra Acharyya Aliva Mallik Debopriya Banerjee Suman Ganguli Arindam Das Sudeepto Dasgupta J.P.Banerjee	2014	Journal of Semiconductors2014，35，8：	1

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