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| 1 | Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD显示文摘InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N 2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml min 1 . The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material. | Qin, Fuwen Zhang, Dong Bai, Yizhen Ju, Zhenhe Li, Shuangmei Li, Yucai Pang, Jiaqi Bian, Jiming | 2012 | Rare Metals2012，31，2： | 2 |
| 2 | Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature显示文摘Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium source.The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman scattering.The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm.The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)curve.The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes. | WANG EnPing BIAN JiMing QIN FuWen ZHANG Dong LIU YueMei ZHAO Yue DUAN ZhongWei WANG Shuai | 2013 | Chinese Science Bulletin2013，58，30： | 2 |
| 3 | Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition system with monitoring in situ for epitaxial growth of group-Ill nitrides 显示文摘 | XU Yin GU Biao QIN Fuwen | 2004 | Journal of Vacuum Science and Technology A2004，22，2： | 1 |
| 4 | Investigation of GaN growth directly on Si( 001 ) by ECR plasma enhanced MOCVD显示文摘 | Xu Yin Gu Biao Qin Fuwen | 2002 | Chinese Journal of Semiconductors2002，23，12： | 1 |
| 5 | ZnO Films on Transferable and Low Thermal Resistance Graphite Substrate Grown by Ultrasonic Spray Pyrolysis显示文摘ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn(CH 3 COO) 2 ·2H 2 O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet(UV) emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin fi lms could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with suffi cient power durability. | 边继明 MA Xiaowen SUN Jingchang ZHANG Zhikun WANG Yuxin QIN Fuwen LUO Yingmin ZHANG Yuzhi FU Xianping | 2014 | Journal of Wuhan University of Technology(Materials Science)2014，29，3： | 0 |
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