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| 1 | Influence of Sm3+ion in structural,morphological,and electrochemical properties of Li Mn2O4synthesized by microwave calcination显示文摘 | Balaji S R K Mutharasu D Shanmugan S | 2010 | Ionics2010，16，： | 1 |
| 2 | A feasibility study on SnO2/NiFe2O4 nanoeomposites as anodes for Li ion batter- ies显示文摘 | Balaji S Vasuki R Mutharasu D | 2013 | Journal of Alloys and Compounds2013，554，： | 1 |
| 3 | Influence of Sm3 +ion in structural,morphological and electrochemical propertiesof LiMn2O4 synthesized by microwavealcination显示文摘 | Balaji S Mutharasu D Shanmugan S | | 0，，04： | 1 |
| 4 | A review on microwave synthesis of electrode materials for lithium-ion batteries显示文摘 | Balaji S Mutharasu D Subramanian N S | 2009 | Ionics2009，15，6： | 1 |
| 5 | Performance of Chemical Vapor Deposited Boron-Doped AlN Thin Film as Thermal Interface Materials for 3-W LED: Thermal and Optical Analysis显示文摘Boron-doped aluminum nitride(B-Al N)thin films were synthesized on Al substrates by using chemical vapor deposition method by changing the synthesis parameters and were used as thermal interface material for high power light emitting diode(LED).The B-Al N thin film-coated Al substrate was used as heat sink and studied the performance of high power LED at various driving currents.The recorded transient cooling curve was evaluated to study the rise in junction temperature(T_j),total thermal resistance(R_(th-tot))and the substrate thermal resistance(R_(th-sub))of the given LED.From the results,the B-Al N thin film(prepared at process 4)interfaced LED showed low R_(th-tot)and T_jvalue for all driving currents and observed high difference in R_(th-tot)(DR_(th-tot)=2.2 K/W)at 700 m A when compared with the R_(th-tot)of LED attached on bare Al substrates(LED/Al).The T_jof LED was reduced considerably and observed 4.7°C as DT_jfor the film prepared using process 4 condition when compared with LED/Al boundary condition at 700 m A.The optical performance of LED was also tested for all boundary conditions and showed improved lux values for the given LED at 700 m A where B-Al N thin film was synthesized using optimized flow of Al,B and N sources with minimized B and N content.The other optical parameters such as color correlated temperature and color rendering index were also measured and observed low difference for all boundary conditions.The observed results are suggested to use B-Al N thin film as efficient solid thin film thermal interface materials in high power LED. | S. Shanmugan D. Mutharasu | 2018 | Acta Metallurgica Sinica(English Letters)2018，31，1： | 1 |
| 6 | Thermal analysis of power LED employing dual interface method and water flow as a cooling system 显示文摘 | Anithambigai P Dinash K Mutharasu D | 2011 | Thermochimica Acta2011，523，2： | 1 |
| 7 | Thermal analysis of power LED employing dual interface method and water flow as a cooling system显示文摘 | Anithambigai P Dinash K Mutharasu D Shanmugan S Lim C K | | 0，，1： | 1 |
| 8 | A Re- view on Microwave Synthesis of Electrode Materials for Lithium-ion Batteries 显示文摘 | Balaji S Mutharasu D Subramanian N S | 2009 | Ionics2009，15，6： | 1 |
| 9 | Thermal analysis of power LED employing dual interface method and water flow as a cooling system显示文摘 | Anithambigai P Dinash K Mutharasu D | 2011 | Thermochimica Acta(S0040-6031)2011，523，1： | 1 |
| 10 | Thermal resistance of high power LED on surface modified heat sink显示文摘 | D. MUTHARASU S. SHANMUGAN | 2013 | Frontiers of Optoelectronics2013，6，2： | 0 |
| 11 | Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages显示文摘The relationship between the photometric, electric, and thermal parameters of light-emitting diodes(LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide(InGaAlP)-based thin-film surface-mounted device(SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum(Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster(thermal transient tester) and TeraL ED(thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency. | Muna E.Raypah Mutharasu Devarajan Fauziah Sulaiman | 2017 | Chinese Physics B2017，26，7： | 0 |
| 12 | Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement显示文摘Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor(MOSFET)is an important semiconductor device for light emitting diode-integrated circuit(LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester(T3ster) at 2.0 A input current and ambient temperature varying from25?C to 75?C. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4_(I-shaped)shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4_(I-shaped)than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance. | Norazlina M S Dheepan Chakravarthii M K Shanmugan S Mutharasu D Shahrom Mahmud | 2017 | Chinese Physics B2017，26，9： | 0 |
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