|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Switch type PANI/ZnO core-shell microwire heterojunction for UV photodetection显示文摘In this study,single crystal ZnO microwires(MW)with size of~5.4 mm×30μm are prepared through a chemical vapor deposition technique at high temperature(1200℃).Subsequently,p-type conducting polyaniline(PANI)polymers with different conductivities are densely coated on part of the ZnO MW to construct organic/inorganic core-shell heterojunction photodetectors.The hetero-diodes reach an extremely high rectifcation ratio(I_(+3V)/I_(-3V))of 749230,and a maximum rejection ratio(I_(350nm)/I_(dark))of 3556(at-3 V),indicating great potential as rectifed switches.All the heterojunction devices exhibit strong response to ultraviolet(UV)radiation with high response speed.Moreover,the obvious photovoltaic behavior can also be obtained,allowing the device to operate as an independent and stable unit without externally supplied power.Under 0 V bias voltage,the self-powered photodetector shows a maximum responsivity of 0.56 mA W~(-1)and a rapid response speed of 0.11 ms/1.45 ms(rise time/decay time).Finally,a fnite difference time domain(FDTD)simulation is performed to further demonstrate the interaction mechanism between the incident light feld and the hexagonal cavity,which strongly supports the enhancement of the light absorption in whispering-gallery-mode resonator. | Yihan Chen Longxing Su Mingming Jiang Xiaosheng Fang | 2022 | Journal of Materials Science & Technology2022，，10： | 3 |
| 2 | Scalable manufacture of vertical p-GaN/n-SnO_(2) heterostructure for self-powered ultraviolet photodetector, solar cell and dual-color light emitting diode显示文摘Vertical SnO_(2)based p-n junctions are pivotal since they built the core components in photoelectronic systems.Nevertheless,preparation of high-quality p-SnO_(2)with controllable hole mobility and concentration is still a great challenge owing to the self-compensating effect and lattice distortion caused by the radius discrepancy between host and doped atoms.Herein,p type GaN:Mg grown by metal organic chemical vapor deposition is employed as hole transportation layer to construct p-n heterojunction with intrinsic n-SnO_(2)prepared by atomic layer deposition.Both material preparation techniques are compatible with current industrial mass production processes.The p-GaN/n-SnO_(2)heterojunction can be developed as solar cell,dual-color light emitting diode and self-powered,high speed ultraviolet(UV)photodetector with external quantum efficiency of 74%at 0 V bias voltage.In addition,direct recombination of donor bound excitons(D0 X)and UV emission red shifts caused by quantum confinement Stack effect are observed in SnO_(2).Since our device fabrication technique is a standard craft in photoelectronics,the study of p-GaN/n-SnO_(2)heterojunction suggests a simple and effective strategy for large scale device integration in next generation high performance photoelectronic devices. | Longxing Su Yuqing Zuo Jin Xie | 2021 | InfoMat2021，3，5： | 2 |
| 3 | Solar-blind wurtzite MgZnO alloy films stabilized by Be doping 显示文摘 | SU LONGXING ZHU YUAN ZHANG QUANLIN | 2013 | Applied Physics Letter2013，46，24： | 1 |
| 4 | ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer显示文摘 | Mingming Chen Quanlin Zhang Longxing Su Yuquan Su Jiashi Cao Yuan Zhu Tianzhun Wu Xuchun Gui Chunlei Yang Rong Xiang Zikang Tang | 2012 | Materials Research Bulletin2012，，9： | 1 |
| 5 | Facile fabrication of heterostructure with p-BiOCl nanoflakes and n-ZnO thin film for UV photodetectors显示文摘Herein, high-quality n-ZnO film layer on c-sapphire and well-crystallized tetragonal p-BiOCl nanoflakes on Cu foil are prepared, respectively. According to the absorption spectra, the bandgaps of n-ZnO and p-BiOCl are confirmed as ~3.3 and~3.5 eV, respectively. Subsequently, a p-BiOCl/n-ZnO heterostructural photodetector is constructed after a facile mechanical bonding and post annealing process. At –5 V bias, the photocurrent of the device under 350 nm irradiation is ~800 times higher than that in dark, which indicates its strong UV light response characteristic. However, the on/off ratio of In–ZnO–In photodetector is ~20 and the Cu–BiOCl–Cu photodetector depicts very weak UV light response. The heterostructure device also shows a short decay time of 0.95 s, which is much shorter than those of the devices fabricated from pure ZnO thin film and BiOCl nanoflakes. The p-BiOCl/n-ZnO heterojunction photodetector provides a promising pathway to multifunctional UV photodetectors with fast response, high signal-to-noise ratio, and high selectivity. | Longxing Su Weixin Ouyang Xiaosheng Fang | 2021 | Journal of Semiconductors2021，42，5： | 1 |
| 6 | Well-controlled wet etching of ZnO films using hydrogen peroxide solution显示文摘 | Yuchao Wang Tianzhun Wu Mingming Chen Longxing Su Quanlin Zhang Lifang Yuan Yuan Zhu Zikang Tang | 2013 | Applied Surface Science2013，，： | 1 |
| 7 | ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer显示文摘 | Mingming Chen Quanlin Zhang Longxing Su Yuquan Su Jiashi Cao Yuan Zhu Tianzhun Wu Xuchun Gui Chunlei Yang Rong Xiang Zikang Tang | 2012 | Materials Research Bulletin2012，，9： | 1 |
您所在的机构暂未开通此部分的功能，请联系管理员