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23篇 您的检索式：作者名="KROST A"

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	题名	作者	年代	出处	被引量
1	LPMOCVD growth of GaN on silicon substrates-comparison between AlAs and ZnO nucleation layers显示文摘	STRITTMATTER A KROST A T U RCK V	1999	Mater Sci Eng1999，59，13：	1
2	Structural investigation of GaN layers grown on Si (111) substrates using a nitrated AlAs buffer layer显示文摘	STRITTMATTER A BIMBERG D KROST A	2000	J Cryst Growth2000，221，14：	1
3	Laser-interference lithography tailored for highly symmetrically arranged Zn0 nanowire arrays显示文摘	Kim D S Ji R Fan H J Bertram F Scholz R Dadgar A Nielsch K Krost A Christen J.Gosele U Zacharias M		0，，01：	1
4	GaN-based epitaxy on silicon: Stress measurements显示文摘	KROST A DADGAR A STRASSBURGER G	2003	Phys State Sol (A)2003，200，1：	1
5	显示文摘	Krost A Dadgar A Biasing J	2004	Applied Physics Letters2004，85，16：	1
6	FT-IR transmission spectroscopy for quantitation of ammonium bisulfate in fine particulate matter collected on Teflon filters显示文摘	Krost K J McClenny W A	1994	Applied Spectroscopy1994，48，：	1
7	显示文摘	Krost A Blasing J Lunenburger M	1999	Appl Phys Lett1999，75，：	1
8	GaN-based optoelectronics on silicon substrates显示文摘	KROST A DADGAR A	2002	Mater Sci Eng B2002，93，：	1
9	显示文摘	Krost A Dadgar A	2003	Phys StatSol a2003，194，：	1
10	Scie and Eng B显示文摘	Krost A Dadgar A Mater	2002	932002，7784，：	1
11	Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy显示文摘	Krost A Christen J Oleynik N	2004	Appl Phys Lett2004，85，：	1
12	Evolution of stress in GaN heteroepitaxy on A1N/Si(111): from hydrostatic compressive to biaxial tensile 显示文摘	KROST A DADGAR A BLASING J	2004	APL2004，85，16：	1
13	LP-MOCVD growth of GaN on silison substrates-compadson between AlAs and ZnO nucleation layers 显示文摘	Strittmatter A Krost A Turck V StraBburg M Bimberg D Biasing J Hempel T Christen J Neubauer B Gerthsen D Christmann T and Meyer BK	1999	Mater Sci and Eng B1999，59，：	1
14	Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays显示文摘	Kim D S Ji R Fan H J Bertram F Scholz R Dadgar A Nielsch K Krost A Christen J G(o)sele U Zacharias M		0，，01：	1
15	Cathodoluminescenee of epitaxial GaN and ZnO thin films for scintillator appli- cations 显示文摘	Schenk H P D Borenstain S I Berezin A Schon A Cheifetz E Dadgar A Krost A	2009	Journal of Crystal Growth2009，311，16：	1
16	Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography显示文摘	Fan H J Fuhrmann B Scholz R Syrowatka F Dadgar A Krost A Zacharias M		0，，01：	1
17	GaN-based optoelectronics on silicon substrates 显示文摘	KROST A DADGAR A	2002	Materials Science and Engineering: B2002，93，1：	1
18	GaN-based optoelectronics on silicon substrate 显示文摘	Krost A Dadgar A	2002	Mater Sci Eng B2002，93，：	1
19	Room-temperature coutinuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition显示文摘	Heinrichsdorff F Mao M H Kirstaedter N Krost A Bimberg D Kosogov A O Wemer P		0，，01：	1
20	Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots显示文摘	Heinrichsdorff F Grundmann M Stier O Krost A Bimberg D		0，，1：	1

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