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15篇 您的检索式:作者名="FOLLSTAEDT D M"
    题名 作者 年代 出处 被引量
1Misfit Dislocation Formation in the A1GaN/GaN Heterointerface显示文摘Floro J A Follstaedt D M Provencio P 2004Journal of Applied Physics2004,96,12:1
2Grain boundary-mediated plasticity in nanocrystalline nickel显示文摘SHAN Z W STACH E A WIEZOREK J M K KNAPP J A FOLLSTAEDT D M MAO S X 2004Science2004,305,:1
3Finite-element modeling of nanoindentation显示文摘Knapp J A Follstaedt D M Myers S M 1999J Appl Phys1999,85,3:1
4Finiteelement modeling of nanoindentation for evaluating mechanical properties of MEMS materials显示文摘Knapp J A Follstaedt D M Myers S M 1998Surface and Coatings Technology1998,,:1
5Grain boundary-mediated plasticity in nanocrystalline nickel显示文摘SHAN Z W STACH E A WIEZOREK J M K KNAPP J A FOLLSTAEDT D M MAO S X 2004Science2004,305,5684:1
6Finite-element modeling of nanoindentation for determining the mechanical prop- erties of implanted layers and thin films 显示文摘KNAPP J A FOLLSTAEDT D M BARBOUR J C 1997Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms1997,,:1
7Grain boundary mediated plasticity in nanocrystalline nickel 显示文摘SHAN Z W STACH E A WIEZOREK J M K KNAPP 1 A FOLLSTAEDT D M MAO S X 2005Science2005,308,:1
8Strain relaxation in AIGaN muhilayer structures by inclined dislocations显示文摘D M Follstaedt S R Lee A A Allerman 2009J Appl Phys2009,105,083507:1
9Grain boundary-mediated plasticity in nanocrystalline nickel 显示文摘SHAN Z W STACH E A WIEZOREK J M K KNAPP J A FOLLSTAEDT D M MAO S X 2004Science2004,305,5684:1
10Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors 显示文摘FOLLSTAEDT D M PROVENCIO P P MISSERT N A 2002APL2002,81,14:1
11Mechanical properties of ion-implanted amorphous silicon显示文摘Follstaedt D M Knapp J A Myers S M 2004Journal of Materials Research2004,19,1:1
12查看详情显示文摘Shan Z Stach E A Wiezorek J M K Knapp J A Follstaedt D M Mao S X 0,,:1
13显示文摘 Follstaedt D M Barbour J C 1997NuclearInstruments and Methods in Physics Research Section B1997,127,128:1
14Improved wear properties of high energy ion - implanted Ti - 6AI -4V显示文摘Follstaedt D M Yost F G Pope L E 1984Materials Science and Engineering1984,6,3:1
15Growth and characterization of GaInP unicompositional disoeder-order-disorder quantum wells显示文摘SCHNEIDER R P JONES J E D FOLLSTAEDT D M 1965Applied Physics Letters1965,,5:1
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