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| 1 | Impact of switching frequencies on the TID response of SiC power MOSFETs显示文摘Different switching frequencies are required when SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)are switching in a space environment.In this study,the total ionizing dose(TID)responses of SiC power MOSFETs are investigated under different switching frequencies from 1 kHz to 10 MHz.A significant shift was observed in the threshold voltage as the frequency increased,which resulted in premature failure of the drain-source breakdown voltage and drain-source leakage current.The degradation is attributed to the high activation and low recovery rates of traps at high frequencies.The results of this study suggest that a targeted TID irradiation test evaluation method can be developed according to the actual switching frequency of SiC power MOSFETs. | Sheng Yang Xiaowen Liang Jiangwei Cui Qiwen Zheng Jing Sun Mohan Liu Dang Zhang Haonan Feng Xuefeng Yu Chuanfeng Xiang Yudong Li Qi Guo | 2021 | Journal of Semiconductors2021，42，8： | 2 |
| 2 | The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET显示文摘We investigate the hot carrier injection effect(HCI)and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and irradiation bias conditions in this paper.In the HCI test,the degradation of threshold voltage and saturation current decreases with the increase of fin number,which means that HCI weakens when the fin number increases.The reason is attributed to the coupling effect between fins.Moreover,irradiation is shown to weaken the degradation during the subsequent hot carrier test.The influence of irradiation on HCI is more obvious with ON bias than that of OFF bias and transmission gate bias.It is supposed that the Si–H bonds can be broken by irradiation before the HCI test,which is one reason for the irradiation influence on HCI.Besides,trapped charges are generated in the shallow trench isolation by the radiation,which could reduce the channel electric field,and then weaken the HCI. | Baoshun Wang Jiangwei Cui Qi Guo Qiwen Zheng Ying Wei Shanxue Xi | 2020 | Journal of Semiconductors2020，41，12： | 2 |
| 3 | Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs显示文摘 | Cui Jiangwei Xue Yaoguo Yu Xuefeng | | 0，，01： | 1 |
| 4 | An interpretation of the genetic polymorphism and population genetic background of Ankang Han population via a novel InDel panel显示文摘In this research,genotyping data of 43 InDel loci in 311 Han individuals in Ankang City,Shaanxi Province,China were detected using a self-developed five-dye multiplex amplification panel.The allelic frequencies and forensic parameters of all InDel loci were calculated.The combined power of discrimination and probability of exclusion values were 0.99999999999999999882739 and 0.999887424,respectively,which demonstrated that this 43-InDel panel was powerful for individual identifications in Ankang Han population.Moreover,genetic distances,pairwise F_(ST)values,principal component analyses,phylogenetic trees and STRUCTURE analyses were performed to investigate the genetic affinities between Ankang Han and reference groups.Population genetic investigations indicated that Ankang Han population had a close genetic relationship with Southern Han population compared with other reference groups. | Wei Cui Xiaoye Jin Yating Fang Qiong Lan Jiangwei Lan Man Chen Shuyan Mei Tong Xie Bofeng Zhu | 2022 | Forensic Sciences Research2022，7，4： | 0 |
| 5 | Ionizing radiation effect on 10-bit bipolar A/D converter显示文摘In this article,radiation effects and annealing characteristics of a bipolar analog-to-digital converter(ADC) are investigated in different biases and dose rates.The results show that ADC is sensitive to both the bias and dose rate. Under high-dose-rate irradiation,the ADC functions well,while under low-dose-rate irradiation,the parameters of ADC change obviously at low dose level,and the damage is significant at zero bias.Combining the fringing field with the space charge model,the underlying mechanism for this response is discussed. | CHEN Rui LU Wu REN Diyuan ZHENG Yuzhan WANG Yiyuan FEI Wuxiong LI Maoshun LAN Bo CUI Jiangwei | 2010 | Nuclear Science and Techniques2010，21，3： | 0 |
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