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| 1 | Influence of growth time on crystalline structure,conductivity and optical properties of ZnO thin films显示文摘This paper examines the growth of ZnO thin films on glass substrate at 350℃using an ultrasonic spray technique.We have investigated the influence of growth time ranging from 1 to 4 min on structural,optical and electrical properties of ZnO thin films.The as-grown films exhibit a hexagonal structure wurtzite and are(002) oriented.The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min.The average transmittance is about 80%,thus the films are transparent in the visible region.The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min.The minimum value of electrical resistivity of the films is 0.13Ω·cm obtained at 2 min.A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350℃has been reported. | Said Benramache Foued Chabane Boubaker Benhaoua Fatima Z.Lemmadi | 2013 | Journal of Semiconductors2013，34，2： | 9 |
| 2 | Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films显示文摘Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray.The thin films were deposited at three different substrate temperatures of 300,350 and 400℃.The obtained films had a hexagonal wurtzite structure with a strong(002) preferred orientation.The maximum crystallite size value of the film deposited at 350℃is 55.46 nm.Spectrophotometer(UV-vis) of a Co doped ZnO film deposited at 350℃shows an average transmittance of about 90%.The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350℃.The electrical conductivity of the films deposited at 300,350 and 400℃were 7.424,7.547 and 6.743(Ω·cm)-1 respectively.The maximum activation energy value of the films at 350℃was 1.28 eV,indicating that the films exhibit a n-type semiconducting nature. | Said Benramache Boubaker Benhaoua Foued Chabane | 2012 | Journal of Semiconductors2012，33，9： | 8 |
| 3 | Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique显示文摘Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique.Conditions of preparation have been optimized to get good quality.A set of aluminum(Al) doped ZnO(between 0 and 5 wt%) thin films were grown on glass substrate at 350℃.Nanocrystalline films with a hexagonal wurtzite structure show a strong(002) preferred orientation.The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%.All the films have low absorbance in the visible region,thus the films are transparent in the visible region;the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%.The electrical conductivity of the films increased from 7.5 to 15.2(Ω·cm)-1.So the best results are achieved in Al doped ZnO film with 3 wt%. | Abdelouahab Gahtar Said Benramache Boubaker Benhaoua Foued Chabane | 2013 | Journal of Semiconductors2013，34，7： | 6 |
| 4 | Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique显示文摘Zinc oxide(ZnO) thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 m L of deposition rate, the ZnO thin films were deposited at two different temperatures: 300 and 350°C. The substrates were heated using the solar cells method.The substrate was R217102 glass, whose size was 30 17.5 1 mm3. The films exhibit a hexagonal wurtzite structure with a strong(002) preferred orientation. The higher value of crystallite size is attained for sprayed films at 350°C, which is probably due to an improvement of the crystallinity of the films at this point. The average transmittance of obtain films is about 90%–95%, as measured by a UV–vis analyzer. The band gap energy varies from 3.265 to 3.294 e V for the deposited Zn O thin film at 300 and 350°C, respectively. The electrical resistivity measured of our films are in the order 0.36 cm. | Yacine Aoun Boubaker Benhaoua Brahim Gasmi Said Benramache | 2015 | Journal of Semiconductors2015，36，1： | 2 |
| 5 | A comparative study on structural and optical proper- ties of ZnO and Al-doped ZnO thin films obtained by ul- trasonic spray method using different solvents 显示文摘 | Abdelouahab Gahtar Achour Rahal Boubaker Benhaoua | 2014 | Inter- national Journal for Light and Electron Optics2014，125，14： | 1 |
| 6 | Preparation of n-type semiconductor SnO_2 thin films显示文摘We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin(Ⅱ) chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopant source,solvent and stabilizer,respectively.The SnO2:F thin films were deposited at 350℃and a pending time of 60 and 90 s.The as-grown films exhibit a hexagonal wurtzite structure and have(101) orientation.The G = 31.82 nm value of the grain size is attained from SnO2:F film grown at 90 s,and the transmittance is greater than 80%in the visible region.The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58(Ω·cm)-1,with the maximum activation energy value of the films being found to measure 22.85 meV,indicating that the films exhibit an n-type semiconducting nature. | Achour Rahal Said Benramache Boubaker Benhaoua | 2013 | Journal of Semiconductors2013，34，8： | 0 |
| 7 | The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method显示文摘This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin(II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2 :F thin films were deposited at a 350 C pending time(5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2:F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9( cm)1for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2:F thin films deposited by ultrasonic spray was reported. | Achour Rahal Said Benramache Boubaker Benhaoua | 2013 | Journal of Semiconductors2013，34，9： | 0 |
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