Piezoresistive properties of resonant tunneling diodes

查看全文 作　　者：MAO [1]Haiyang;XIONG [1]Jijun;ZHANG [1]Wendong;XUE [1]Chenyang;SANG [1]Shengbo;BAO [1]Aida 机构地区：[1]Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry of Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China 出　　处：《Frontiers of Electrical and Electronic Engineering in China》索引2007年第2卷第4期,共5页 基　　金：supported by the National Natural Science Foundation of China(Grant No.50405025 and 50375050);the Fork Ying Tung Education Foundation(No.101052). 摘　　要：measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The experimental results demonstrate that the piezoresistive sensitivity of RTD is larger than 1x10−8 Pa−1.To accurately represent the piezoresistive properties of RTD,the current-voltage characteristic coherence of the same RTD was tested.According to the experimental results,the largest relative resistance shift of an RTD in the same measurement environment is less than 3%,of which 1%is caused by the testing apparatuses. 关 键 词：RTD piezoresistive property COHERENCE sensitivity RAMAN