Investigation of silicon on insulator fabricated by two-step O^+ implantation

查看全文 作　　者：WEI [1,2]Xing;XUE [1]ZhongYing;WU [1]AiMin;WANG [2]Xiang;LI [2]XianYuan;YE [1]Fei;CHEN [2]Jie;CHEN [2]Meng;ZHANG [1]Box;LIN [1]ChengLu;ZHANG [1,2]Miao;WANG [1,2]Xi

机构地区：[1]State Key Laboratory of Functional Material for lnformatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;[2]Shanghai Simgui Technology Company Limited, Shanghai 201821, China

出　　处：《Chinese Science Bulletin》索引2011年第56卷第4期,共5页

基　　金：supported by the National Science and Technology Major Projects of China (2009ZX02040);the National Basic Research Program of China (2010CB832906);the National Natural Science Foundation of China (60721004 and 61006088);Shanghai Foundation for Development of Science and Technology (08520740100);the Natural Science Foundation of Shanghai (10ZR1436100) 摘　　要：In this paper,we investigated the dose window of forming a continuous buried oxide(BOX) layer by single implantation at the implantation energy of 200 keV. Then,an improved two-step implantation process with second implantation dose of 3×1015 cm-2 was developed to fabricate high quality separation by implanted oxygen(SIMOX) silicon on insulator(SOI) wafers. Compared with traditional single implantation,the implantation dose is reduced by 18.2%. In addition,the thickness and uniformity of the BOX layers were evaluated by spectroscopic ellipsometry. Defect-free top Si as well as atomic-scale sharp top Si/buried oxide interfaces were observed by transmission electron microscopy,indicating a high crystal quality and a perfect structure of the SOI fabricated by two step implantation. The top Si/BOX interface morphology of the SOI wafers fabricated by single or two-step implantation was also investigated by atomic force microscopy. 关键词：硅绝缘体植入电子显微镜观察 SOI晶片制备注入剂量原子力显微镜界面形态

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Investigation of silicon on insulator fabricated by two-step O^+ implantation

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