The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors

查看全文 作　　者：LIU Jun HE JinLiang HU Jun LONG [1]WangCheng

机构地区：[1]State Key Laboratory of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China

出　　处：《Science China(Technological Sciences)》索引2011年第54卷第2期,共4页

基　　金：supported by the National Natural Science Foundations of China(Grant Nos.50425721 and 50737001) 摘　　要：In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varistors,ZnO-Bi2O3 based varistor ceramic samples were sintered at 1000,1100,1200 and 1300°C,respectively.The measured results indicate that the sample sintered at 1300°C possesses the lowest voltage gradient and nonlinear coefficient,compared with other samples.The barrier height of the samples decreased as the sintering temperature increased,which resulted in the deterioration of nonlinearity.Furthermore,two bulk electron traps determined by admittance spectroscopy were generally independent of sintering temperature,which indicated that these two traps might originate from the intrinsic defects in ZnO lattice. 关键词：氧化锌压敏电阻器烧结温度电子陷阱肖特基势垒依赖性氧化锌压敏陶瓷非线性系数电压梯度

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The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors

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