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| 1 | 4H碳化硅单晶中的位错显示文摘4H碳化硅(4H-SiC)单晶具有禁带宽度大、载流子迁移率高、热导率高和稳定性良好等优异特性,在高功率电力电子、射频/微波电子和量子信息等领域具有广阔的应用前景。经过多年的发展,6英寸(1英寸=2.54 cm)4H-SiC单晶衬底和同质外延薄膜已得到了产业化应用。然而,4H-SiC单晶中的总位错密度仍高达10^(3)~10^(4) cm^(-2),阻碍了4H-SiC单晶潜力的充分发挥。本文介绍了4H-SiC单晶中位错的主要类型,重点讲述4H-SiC单晶生长、衬底晶圆加工以及同质外延过程中位错的产生、转变和湮灭机理,并概述4H-SiC单晶中位错的表征方法,最后讲述了位错对4H-SiC单晶衬底和外延薄膜的性质,以及4H-SiC基功率器件性质的影响。 | 杨光 刘晓双 李佳君 徐凌波 崔灿 皮孝东 杨德仁 王蓉 | 2022 | 人工晶体学报2022，51，9： | 2 |
| 2 | Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights显示文摘Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide(4H-SiC),which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals.However,the etching mechanism of 4H-SiC is limited misunderstood.In this letter,we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching,X-ray photoelectron spectroscopy(XPS)and first-principles investigations.The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol,respectively.The molten-KOH etching rate of the C face is higher than the Si face.Combining XPS analysis and first-principles calculations,we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten KOH.The faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable,and easier to be removed with molten alkali,rather than the C face being easier to be oxidized. | Guang Yang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang | 2024 | Journal of Semiconductors2024，45，1： | 0 |
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