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| 1 | M0S2 dual-gate transistors with electrostatically doped contacts显示文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)such as molybdenum disulfide(M0S2)have been intensively investigated because of their exclusive physical properties for advaneed electronics and optoelectronics.In the present work,we study the M0S2 transistor based on a novel tri-gate device architecture,with dual-gate(Dual-G)in the channel and the buried side-gate(Side-G)for the source/drain regi ons.All gates can be in depe ndently con trolled without in terfere nee.For a MoS2 sheet with a thick ness of 3.6 nm,the Schottky barrier(SB)and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G.Thus,the extri nsic resista nee can be effectively lowered,and a boost of the ON-state cur re nt can be achieved.Mean while,the cha nn el c ontrol remai ns efficient under the Dual-G mode,with an ON-OFF current ratio of 3 x 107 and subthreshold swing of 83 mV/decade.The corresponding band diagram is also discussed to illustrate the device operati on mechanism.This no vel device structure ope ns up a new way toward fabricati on of high-performance devices based on 2D-TMDs. | Fuyou Liao Yaocheng Sheng Zhongxun Guo Hongwei Tang Yin Wang Lingyi Zong Xinyu Chen Antoine Riaud Jiahe Zhu Yufeng Xie Lin Chen Hao Zhu Qingqing Sun Peng Zhou Xiangwei Jiang Jing Wan Wenzhong Bao David Wei Zhang | 2019 | Nano Research2019，12，10： | 2 |
| 2 | Deep-ultraviolet integrated photonic and optoelectronic devices:A prospect of the hybridization of group Ⅲ–nitrides, Ⅲ–oxides,and two-dimensional materials显示文摘Progress in the design and fabrication of ultraviolet and deep-ultraviolet groupⅢ–nitride optoelectronic devices,based on aluminum gallium nitride and boron nitride and their alloys,and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed.We emphasize wide-bandgap nitride compound semiconductors(i.e.,(B,Al,Ga)N)as the deep-ultraviolet materials of interest,and two-dimensional materials,namely graphene,two-dimensional boron nitride,and two-dimensional transition metal dichalcogenides,along with gallium oxide,as the hybrid integrated materials.We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices.In this article we provide an overview of aluminum nitride,sapphire,and gallium oxide as platforms for deep-ultraviolet optoelectronic devices,in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates.A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided. | Nasir Alfaraj Jung-Wook Min Chun Hong Kang Abdullah A.Alatawi Davide Priante Ram Chandra Subedi Malleswararao Tangi Tien Khee Ng Boon S.Ooi | 2019 | Journal of Semiconductors2019，40，12： | 2 |
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