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| 1 | InP/GaInP nanowire tunnel diodes显示文摘 | Xulu Zeng Gaute Otnes Magnus Heurlin Renato T Mourao Magnus T Borgstrom | 2018 | Nano Research2018，11，5： | 3 |
| 2 | 纤维材料表面图案化构筑及应用研究进展显示文摘自然界中生物体表面形形色色的图案赋予其减阻、强黏附、超疏水等多样的功能特性。受自然界的启发,研究者在平面基底表面构筑图案方面已经取得了很大研究进展。然而,纤维材料表面的图案化构筑及对纤维材料功能的影响等研究尚不深入。本文总结了目前纤维材料表面图案化的构筑方法,简述了三种'自下而上'策略的图案化形成机制;另外分析了纤维材料表面图案化对其功能的影响,展望了纤维材料表面图案化的潜在应用;最后对构筑方法、形成机制、应用领域提出了展望。本文旨在为纤维材料表面图案的构筑及功能纤维/织物更广阔的工程应用提供借鉴。 | 徐昭 解晓雨 沈浩 郭颖 杨丽丽 葛邓腾 | 2021 | 复合材料学报2021，38，10： | 2 |
| 3 | Discretely-supported nanoimprint lithography for patterning the high-spatial-frequency stepped surface显示文摘Non-planar morphology is a common feature of devices applied in various physical fields,such as light or fluid,which pose a great challenge for surface nano-patterning to improve their performance.The present study proposes a discretely-supported nanoimprint.lithography(NIL)technique to fabricate nanostructures on the extremely non-planar surface,namely high-spatial-frequency stepped surface.The designed discretely imprinting template implanted a discretely-supported intermediate buffer layer made of sparse pillars arrays.This allowed the simultaneous generation of air-cushion-like buffer and reliable support to the thin structured layer in the template.The resulting low bending stiffness and distributed concentrated load of the template jointly overcome the contact difficulty with a stepped surface,and enable the template to encase the stepped protrusion as tight as possible.Based on the proposed discretely-supported NIL,nanostructures were fabricated on the luminous interface of light emitting diodes chips that covered with micrometer step electrodes pad.About 96%of the utilized indium tin oxide transparent current spreading layer surface on top of the light emitting diode(LED)chips was coated with nanoholes array,with an increase by more than 40%in the optical output power.The excellent ability of nanopatterning a non-planar substrate could potentially lead innovate design and development of high performance device based on discretely-supported NIL. | Chunhui Wang Yu Fan Jinyou Shao Zhengjie Yang Jiaxing Sun Hongmiao Tian Xiangming Li | 2021 | Nano Research2021，14，8： | 1 |
| 4 | High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction显示文摘Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices.Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses than in thin films,due to lateral strain relaxation at the surface,but the understanding of the growth and strain distributions in these complex structures is hampered by the lack of high-resolution characterization techniques.Here,we demonstrate strain mapping of an axially segmented GalnP-lnP 190 nm diameter nanowire heterostructure using scanning X-ray diffraction.We systematically investigate the strain distribution and lattice tilt in three different segment lengths from 45 to 170 nm,obtaining strain maps with about 10^-4 relative strain sensitivity.The experiments were performed using the 90 nm diameter nanofocus at the NanoMAX beamline,taking advantage of the high coherent flux from the first diffraction limited storage ring MAX IV.The experimental results are in good agreement with a full simulation of the experiment based on a three-dimensional(3D)finite element model.The largest segments show a complex profile,where the lateral strain relaxation at the surface leads to a dome-shaped strain distribution from the mismatched interfaces,and a change from tensile to compressive strain within a single segment.The lattice tilt maps show a cross-shaped profile with excellent qualitative and quantitative agreement with the simulations.In contrast,the shortest measured InP segment is almost fully adapted to the surrounding GalnP segments. | Susanna Hammarberg Vilgaile Dagyte Lert Chayanun Megan O.Hill Alexander Wyke Alexander Bjorling Ulf Johansson Sebastian Kalbfleisch Magnus Heurlin Lincoln J.Lauhon Magnus T.Borgstrom Jesper Wallentin | 2020 | Nano Research2020，13，9： | 0 |
| 5 | Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires显示文摘Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating PO_(x)/Al_(2)O_(3) shell in contrast to results using SiO_(x). We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited PO_(x)/Al_(2)O_(3) has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices. | Lukas Hrachowina Xianshao Zou Yang Chen Yuwei Zhang Enrique Barrigón Arkady Yartsev Magnus T.Borgström | 2021 | Nano Research2021，14，11： | 0 |
| 6 | Development and characterization of photovoltaic tandemjunction nanowires using electron-beam-induced current measurements显示文摘Nanowires have many interesting properties that are of advantage for solar cells,such as the epitaxial combination of latticemismatched materials without plastic deformation.This could be utilized for the synthesis of axial tandem-junction nanowire solar cells with high efficiency at low material cost.Electron-beam-induced current measurements have been used to optimize the performance of single-junction nanowire solar cells.Here,we use electron-beam-induced current measurements to break the barrier to photovoltaic tandem-junction nanowires.In particular,we identify and subsequently prevent the occurrence of a parasitic junction when combining an InP n-i-p junction with a tunnel diode.Furthermore,we demonstrate how to use optical and electrical biases to individually measure the electron-beam-induced current of both sub-cells of photovoltaic tandem-junction nanowires.We show that with an applied voltage in forward direction,all junctions can be analyzed simultaneously.The development of this characterization technique enables further optimization of tandem-junction nanowire solar cells. | Lukas Hrachowina Enrique Barrigón Magnus T.Borgström | 2022 | Nano Research2022，15，9： | 0 |
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